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ULSI Device Dev. Labs., NEC Corp. | 論文
- High Energy B Implantation for Fe Gettering ; Evaluation of 7.5nm Thick Gate Oxide Reliability
- Evaluation of Dry-Etching Damage Introduced into Si by Schottky Junction Characteristics
- High Performance n/p Junction Characteristics Using High Temperature RTA in Conjunction with H2 Treatment
- Lateral Diffusion Distance Measurement for 40-80nm Junctions by Etching/TEM-EELS Method