スポンサーリンク
Toshiba Research and Development Center, Tokyo Shibaura Electric Co. Ltd. | 論文
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : III. Effect of Holding Time at Growth Temperature
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : II. Effect of Substrate Orientation
- Properties of GaP Red-Emitting Diodes Grown by Liquid-Phase Epitaxy : I. Effect of Oxygen and Tellurium Concentrations in the Epitaxial n Layer
- Electron Mobility and Impurity Concentration in n-GaP Crystals Grown by Slow Cooling of Ga Solution
- Performance of Glass and Film Dosimeters in Personnel Monitoring
- Some Experiments and a Practical Method on Dosimeter Glass Washing Process