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Tokyo Inst. Technol. Tokyo Jpn | 論文
- 18pZA-12 CeRu_2X_2(X=Si,Ge)の硬X線および軟X線光電子分光(光電子分光(超伝導体・強相関系),領域5,光物性)
- QUADRATIC AND CONVEX MINIMAX CLASSIFICATION PROBLEMS
- カ-ボンブラック充填ゴムの電気的性質--温度及び粒子表面処理の効果〔英文〕
- Esterification of Surface Modified Silver Nanoparticles with n-Butanol
- Growth of Strain-Relaxed Si_C_y Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
- Substitutional C Incorporation into Si_C_y Alloys Using Novel Carbon Source, 1, 3-Disilabutane
- Characterization and Device Application of Tensile-Strained Si_C_y Layers Grown by Gas-Source Molecular Beam Epitaxy
- Characterization and Comparison of Strained Si_C_y Metal Oxide Semiconductor Field-Effect Transistor Grown by Gas-Source Molecular Beam Epitaxy and Hot Wire Cell Method
- Novel In(OH)_3:Zn^ Buffer Layer for Cu(InGa)Se_2 Based Solar Cells
- Effect of ZnTe and CdZnTe Alloys at the Back Contact of 1-μm-Thick CdTe Thin Film Solar Cells
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- Preferred Orientation Control of Cu(In_Ga_x)Se_2 (x≈0.28) Thin Films and Its Influence on Solar Cell Characteristics
- Effect of CdCl_2 Treatment Conditions and Stoichiometry on The Deep Level, Carrier Lifetime and Converstion Efficiency of CdTe Thin Film Solar Cells
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of γ-In_2Se_3 Films by Molecular Beam Epitaxy
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Formation of pn Homojunction in Cu(InGa)Se_2 Thin Film Solar Cells by Zn Doping
- Amorphous-to-Polycrystalline Silicon Transition in Hot Wire Cell Method
- Improvement of the Electrochemical Profiling Technique of Carrier Concentration in Cu(InGa)Se_2 Thin Film Solar Cells
- SHG・ラマンイメージングによるペンタセンFETにおける電界・電荷分布評価(有機材料,一般)