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The Institute of Scientific and Industrial Research | 論文
- Dependence of Absorption Coefficient and Acid Generation Efficiency on Acid Generator Concentration in Chemically Amplified Resist for Extreme Ultraviolet Lithography
- Radiolysis of CFC-113 Adsorbed on a Molecular Sieve
- Formation of Conjugated Double Bonds in Poly(vinyl alcohol) Film under Irradiation with γ-Rays at Elevated Temperature
- Reactivity of Halogenated Resist Polymer with Low-Energy Electrons
- Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
- Single-Component Chemically Amplified Resist Based on Dehalogenation of Polymer
- Potential Cause of Inhomogeneous Acid Distribution in Chemically Amplified Resists for Post Optical Lithography
- Reaction Mechanisms of Brominated Chemically Amplified Resists
- Noise Analysis of Si-Based Planar-Type Ion-Channel Biosensors
- Formation of Nanowires Based on $\pi$-Conjugated Polymers by High-Energy Ion Beam Irradiation
- Precise Control of Nanowire Formation Based on Polysilane for Photoelectronic Device Application
- Reductive Dechlorination of α,ω-Dichloroalkanes Adsorbed on Molecular Sieve 13X
- Relationship between Acid Generator Concentration and Acid Yield in Chemically Amplified Electron Beam Resist
- Quencher Effects at 22 nm Pattern Formation in Chemically Amplified Resists
- Effects of Rate Constant for Deprotection on Latent Image Formation in Chemically Amplified Extreme Ultraviolet Resists
- Feasibility Study of Chemically Amplified Extreme Ultraviolet Resists for 22 nm Fabrication
- Radiolytic and Thermal Dehalogenation of CFC-113 Adsorbed on Molecular Sieve 13X
- Scanning Tunneling Microscopy Profiling of Steep Ridges Using Metal-Coated Carbon Nanotube Tip
- Dependence of Acid Yield on Acid Generator in Chemically Amplified Resist for Post-Optical Lithography
- Evaluation of Chemical Gradient Enhancement Methods for Chemically Amplified Extreme Ultraviolet Resists