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The Institute of Scientific and Industrial Research | 論文
- Preparation of Poly(γ-glutamic acid) Hydrogel / Apatite Composites and Their Application for Scaffold of Cell Proliferation
- Pulse Radiolysis of Hexameric Nitrite Reductase Containing Two Type 1 Cu Sites in a Monomer
- The Intramolecular Electron Transfer between the Type 1 Cu and the Type 2 Cu in a Mutant of Hyphomicrobium Nitrite Reductase
- Subpicosecond Pulse Radiolysis Study of Geminate Ion Recombination in Liquid Benzene
- Nanowire Formation and Selective Adhesion on Substrates by Single-Ion Track Reaction in Polysilanes
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (II) : Relation between Resist Space Resolution and Space Distribution of Ionic Species
- Study on Radiation-Induced Reaction in Microscopic Region for Basic Understanding of Electron Beam Patterning in Lithographic Process (I) : Development of Subpicosecond Pulse Radiolysis and Relation between Space Resolution and Radiation-Induced Reactions
- Photo-Induced Reaction Dynamics in Poly (di-n-hexylsilylene) by Excimer Laser Flash Photolysis
- Proton Transfer to Melamine Crosslinkers in X-Ray Chemically Amplified Negative Resists Studied by Time-Resolved and Steady-State Optical Absorption Measurement
- The pH-Dependent Changes of Intramolecular Electron Transfer on Copper-Containing Nitrite Reductase
- Dependence of Acid Generation Efficiency on Molecular Structures of Acid Generators upon Exposure to Extreme Ultraviolet Radiation
- Inclusion Complexation of 4-Biphenylcarboxylate, 4-Biphenylacetate, and 4-Biphenylsulfonate with α-Cyclodextrin, Studied by Pulse Radiolysis
- Determination of Association Constants for Cyclodextrin Inclusion Complexation by Pulse Radiolysis
- Radical Cation of Dodecamethylcyclohexagermane Generated by Pulse Radiolysis
- Radical Anions of Oligogermanes, Me(Me_2Ge)_nMe(n=2, 3, 5, and 10)Generated by Pulse Radiolysis
- X-ray Reflectivity Study on Depth Profile of Acid Generator Distribution in Chemically Amplified Resists
- Dependence of Outgassing Characters at a 157 nm Exposure on Resist Structures
- Dissolution Rate Analysis of ArF Resists Based on the Percolation Model
- Bottom Extreme-Ultraviolet-Sensitive Coating for Evaluation of the Absorption Coefficient of Ultrathin Film
- Relationship between Resolution, Line Edge Roughness, and Sensitivity in Chemically Amplified Resist of Post-Optical Lithography Revealed by Monte Carlo and Dissolution Simulations