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The Institute Of Scientific And Industrial Research (isir) Osaka University | 論文
- Thieno[3,4-d]imidazolium-containing Molecular Wire : Switching Behavior of Photoinduced Intramolecular Electron Transfer
- Electrical Conductance Measurement of Oligothiophene Molecular Wires Using Nanogap Electrodes Prepared by Electrochemical Plating
- Synthesis, Properties, and Structures of Difluoromethylene-bridged Coplanar p-Terphenyl and Its Aryl-capped Derivatives for Electron-transporting Materials
- Materials Design of CuAlO2-Based Dilute Magnetic Semiconductors by First-Principles Calculations and Monte Carlo Simulations
- First-Principles Materials Design of CuAlO2 Based Dilute Magnetic Semiconducting Oxide
- Synthesis of Tripodal-anchor Units Having Pyridine or Amine Functional Groups and Their Adsorption Behavior on Metal Electrodes
- Ab Initio Study for Site Symmetry of Phosphorus-Doped Diamond
- Convenient Synthesis of Dibenzo [a, h]anthracenes and Picenes via C-H Arylation of Acetophenones with Arenediboronates
- Development of Chiral Spiro Ligands for Metal-Catalyzed Asymmetric Reactions
- Ab Initio Study of Donor-Hydrogen Complexes for Low-Resistivity n-Type Diamond Semiconductor
- X-Ray Photoelectron Spectroscopy of Metallo Porphyrins Having Bulky Substituents:Standard Values of Core Ionization Potentials
- Light as a construction tool of metal nanoparticles : Synthesis and mechanism
- P-Type Doping of the Group V Elements in CuInS_2
- Physical Properties, Charge Carrier Mobility, and Photovoltaic Performance of Dendritic Oligothiophene Bearing Naphthalene Bis(dicarboximide) Groups
- Synthesis and Properties of Polymer Having Electronegative Terthiophene Pendants Based on Cyclopenta[c]thiophene
- Materials design for new functional semiconductors by ad initio electronic structure calculation : Prediction vs. experiment
- Synthesis, Properties, and Photovoltaic Performance of Copolymers Based on Difluorodioxocyclopentene-Annelated Thiophene (Special Issue : Photovoltaic Science and Engineering)
- Design of Transparent, Half-Metallic Ferromagnetic $4d$-Transition-Metal-Doped K2S with High Curie Temperature
- New Route to Fabricate Ferromagnetic Semiconductors without Transition Metal Elements
- New Class of Diluted Ferromagnetic Semiconductors based on CaO without Transition Metal Elements