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Technology Development Team Memory Device Business Samsung Electronics Co. | 論文
- Reduction of Random Noise for CMOS Image Sensors with 2.2μm×2.2μm Pixel
- Data Retention Characteristics of MONOS Devices with High-k Dielectrics and High-work Function Metal-gates for Multi-gigabit Flash Memory
- High Density FRAM Technology
- Integration and Electrical Properties of Novel Ferroelectric Capacitors for 0.25μm 1 Transistor 1 Capacitor Ferroelectric Random Access Memory (1T1C FRAM)
- Novel Capacitor Technology for Sub-Quarter Micron 1T1C FRAM
- High Performance Cell Transistor for Long Data Retention Time in Giga-bit Density Dynamic Random Access Memory and Beyond
- High Density FRAM Technology
- High Density FRAM Technology