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Technische Univ. Ilmenau Ilmenau Deu | 論文
- Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy
- Nitrogen Effusion and Self-Diffusion in Ga^N/Ga^N Isotope Heterostructures
- Absorption of InGaN Single Quantum Wells Determined by Photothermal Deflection Spectroscopy
- Quantitative Transmission Electrorn Microscopy Investigation of the Relaxation by Misfit Dislocations Confined at the Interface of GaN/Al_2O_3(0001)