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Taiwan Semiconductor Manufacturing Co. | 論文
- Impact of Zr/Hf Ratio on Reliability of HfZrO_x Gate Dielectric
- Analysis of Structure-Dependent Hot Carrier Effect in Various LDD MOSFET's Using an Efficient Interface State Profiling Method
- A Novel Conductance Measurement Technique for Profiling the Lateral LDD n-Doping Concentrations of Submicron MOS Devices
- A New Observation of the Reverse Short Channel Effect in Submicron n-MOSFET by Using Gate-Induced Drain Leakage Current Measurement