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Sumitomo Electric Industries, Ltd. | 論文
- Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-Ray Emission Spectroscopy
- Realization of Fast InGaAs Photoconductive Response by Ion Implantation and Annealing with No Degradation of Peak Responsivity
- Electroluminescent Device Made of Diamond
- Elastic Properties of (NH_4)_2SO_4 in the Paraelectric Region
- Fabrication and wear properties of TiN nanoparticle-dispersed Si_3N_4 ceramics(SiAlons and Non-oxides)
- Incorporation Process of the As Atom on the InP(001) Surface Studied by Extended X-Ray Absorption Fine Structure
- Structure and Nonlinear Optical Properties of Diacetylene Thin Films Vapor-Deposited on Highly Oriented Polytetrafluoroethylene Thin Films
- High-T_c(Bi, Pb)_2Sr_2Ca_2Cu_3O_ Superconducting Magnet Operated Using 20 K Gifford-McMahon-Type Refrigerator
- Microstructures and J_c-B Characteristics of Ag-Sheathed Bi-Based Superconducting Wires
- Surface Segregation of Chromium in a Copper-Chromium Alloy and its Effect on Formation of a Native Oxide Layer
- Bend-Insensitive SM Fiber and Its Applications to Access Network Systems(Optical Fibers, Cables and Fiber Devices, Recent Progress in Optoelectronics and Communications)
- Influence of coarse particles on microstructure of aluminum nitride sintered body
- Carbon Nanotubes from a Divided Catalyst : the Carbon Transmission Method
- Syntheses and crystal structures of Si-bearing layered carbides ZrAl_8C_7 and ZrAl_4C_4
- Syntheses and crystal structures of Ge-bearing layered carbides Zr_2Al_4C_5 and Zr_3Al_4C_6
- New phase of BaLaMnO_ formed by annealing in a reducing atmosphere(Global Innovation in Advanced Ceramics)
- A Millimeter-Wave Broadband Wireless Access System Using Mobile Tracking Technology(Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
- High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
- Oscillation of a Magnetically Levitated Diamagnetic Droplet Under a Vertical Magnetic Disturbance
- Advantages of GaN Substrates in InAlGaN Quaternary Ultraviolet-Light-Emitting Diodes