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State Key Laboratory of Crystal Materials and Institute of Crystal Materials | 論文
- Amorphous-Silicon Thin-Film Transistors with Silicon Dioxide Gate Grown in Nitric-Acid Gas
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- Crystal Growth, Thermal and Laser Properties of Neodymium-doped Strontium Fluorapatite
- Diode-Laser-Array End-Pumped Actively Q-Switched Nd:GdVO_4 Laser at 1.06 μm Formed with a Flat-Flat Resonator
- Laser Properties at 1.06 μm for Nd:GdVO_4 Single Crystal Pumped by a High Power Laser Diode
- Growth, Luminescence Properties and Laser Characterization of Nd:GdVO_4 Crystal at 1.34 μm
- Fully Self-Aligned Amorphous-Silicon MUS Transistors
- Photorefractive Oscillation in a Thin Plate of Ce-doped BaTiO_3 Crystal
- Diode-End-Pumped Continuous-Wave and Q-Switched Nd:GdVO4/KTP Laser at 671 nm