スポンサーリンク
State Key Laboratory Of Functional Materials For Informatics Laboratory Of Nanotechnology Shanghai I | 論文
- Si_2Sb_2Te_6 Phase Change Material for Low-Power Phase Change Memory Application
- Germanium Nitride Interfacial Layer for Chalcogenide Random Access Memory Applications
- High Speed Chalcogenide Random Access Memory Based on Si_2Sb_2Te_5
- Investigation of Compositional Gradient Phase Change Si_xSb_2Te_3 Thin Films
- Phase Change Memory Based on (Sb2Te3)0.85--(HfO2)0.15 Composite Film
- Phase change line memory cell based on Ge2Sb2Te5 fabricated using focused ion beam
- Phase Change Memory Cell Using Si2Sb2Te3 Material
- Crystallization Process of Amorphous GaSb_5Te_4 Film for High-Speed Phase Change Memory