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Solid State Lighting and Energy Center, Materials Department, University of California | 論文
- Correlation between Optical Polarization and Luminescence Morphology of (1122)-Oriented InGaN/GaN Quantum-Well Structures
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
- Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization
- Erratum: “Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition”
- Continuous-wave Operation of AlGaN-cladding-free Nonpolar $m$-Plane InGaN/GaN Laser Diodes
- Increased Polarization Ratio on Semipolar ($11\bar{2}2$) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition