スポンサーリンク
Seoul National Univ., School Of Electrical Engineering and Computer Science | 論文
- Pt Buried Gate E-pHEMT with High V_ and Reduced Surface Trap Effects
- In_GaP/Al_GaAs E-pHEMT with High Gate Forward Turn-on Voltage & High Transconductance Linearity
- High performance 50nm In_Al_As/In_Ga_As Metamorphic HEMTs with Si_3N_4 passivation on thin InGaAs/InP layer
- High-Speed Digital Circuits Using RTD as Load-Element
- Novel MOBILE Circuits Using 3 RTDs Operating up to 12.5Gb/s
- The Gate Length Reducing Process for Pseudomorphic In_Al_As/In_Ga_As HEMTs
- HEMT Yield Improvement with Ultrasonic-assisted recess for High speed Integrated Circuit
- High-speed and Low-Power SCFL-Type NRZ Delayed Flip-Flop Circuit Using RTD/HEMT Integration Technology
- High-speed and Low-Power NRZ Delayed Flip-Flop Circuit Using RTD/HEMT Integration Technology