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Semiconductor Technology Laboratory Oki Electric Industry Co. Ltd.:(present Address)department Of El | 論文
- Kinetics of Rapid Thermal Oxidation of Silicon
- Role of SiN Bond Formed by N_2O-Oxynitridation for Improving Dielectric Properties of Ultrathin SiO_2 Films
- 5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
- The Dielectric Reliability of Very Thin SiO_2 Films Grown by Rapid Thermal Processing : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Relationship between Nitrogen Profile and Reliability of Heavily Oxynitrided Tunnel Oxide Films for Flash Electrically Erasable and Programmable ROMs
- Highly Reliable Flash Memories Fabricated by in-situ Multiple Rapid Thermal Processing (Special Section on High Speed and High Density Multi Functional LSI Memories)
- A Comparative Study of High-Field Endurance for NH_3Nitrided and N_2O-Oxynitrided Ultrathin SiO_2 Films (Special Issue on Sub-Half Micron Si Device and Process Technologies)