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Semiconductor Research Institute Semiconductor Research Foundation | 論文
- GaP Raman Terahertz high accuracy spectrometer and its application to detect organic and inorganic crystalline defects
- A comparative study of THz spectra
- Digital Etching of InP by Intermittent Injection of Phosphorous Precursors in Ultra-high Vacuum
- Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum
- Digital Etching of InP Using Tris-Dimethylaminophosphorus in Ultra-High Vacuum
- Compositional Dependence of Hardness in ZnSe_Te_x and Be_yZn_Se_Te_x
- Effective Segregation Coefficient of Tellurium in ZnSe_Te_x and Be_yZn_Se_Te_x Bulk Crystals Grown Using Traveling Solvent Method
- Deep Level in InP Crystal Grown by the Horizontal Bridgman Method under Controlled Phosphorus Vapor Pressure
- Correlation Field Splitting of Intramolecular Vibrations of Crystalline Tetracene in Terahertz Region
- Fabrication and Characterization of GaP Photonic Crystals for Terahertz Wave Application
- Terahertz Wave Generation from GaP with Continuous Wave and Pulse Pumping in the 1-1.2μm Region
- Consequence of a Defect on the Terahertz Spectra of L-Asparagine Monohydrate
- Photocapacitance Measurement on Intentionally Undoped n-Type Ga_Al_As Grown by Stoichiometry Control Method