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Semiconductor Research Institute | 論文
- GaP Raman Terahertz high accuracy spectrometer and its application to detect organic and inorganic crystalline defects
- A comparative study of THz spectra
- New perfect one-factorizations of complete graphs
- Nucleation and Surface Roughness in Self-Limiting Monolayer Epitaxy of GaAs
- Fabrication and Characterization of GaP Photonic Crystals for Terahertz Wave Application
- Terahertz Wave Generation from GaP with Continuous Wave and Pulse Pumping in the 1-1.2μm Region
- Consequence of a Defect on the Terahertz Spectra of L-Asparagine Monohydrate
- Bright Pure Green Emission from N-free GaP LED's : B-2: GaAs FET/LED AND DETECTOR
- Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP
- Conservation of Polarization in GaAs Junction LASER
- Gain Factor and Internal Loss of GaAs Junction Lasers
- Development of THz wave oscillation and its application to molecular sciences
- Terahertz-Wave Spectroscopy for Precise Histopathological Imaging of Tumor and Non-tumor Lesions in Paraffin Sections
- Diffusion Control of Dopant from Heavily Se Doped n Type GaAs Layers Grown by Molecular Layer Epitaxy
- Balance Method for Experiments under Controlled Vapor Pressure
- Turn-on Mechanism of a Microplasma