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Semiconductor Leading Edge Technologies, Inc. (Selete), 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan | 論文
- Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
- Carbon-Doped Silicon Oxide Films with Hydrocarbon Network Bonds for Low-$k$ Dielectrics: Theoretical Investigations
- Diffusion Control Using Matrix Change during Chemical Reaction for Inducing Anisotropic Diffusion in Chemically Amplified Resists