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Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc. | 論文
- Improving High-κ Gate Dielectric Properties by High-Pressure Water Vapor Annealing
- Metal-Organic Chemical Vapor Deposition of HfO_2 by Alternating Supply of Tetrakis-Diethylamino-Hafnium and Remote-Plasma Oxygen
- Metalorganic Chemical Vapor Deposition of HfO_2 Films through the Alternating Supply of Tetrakis(1-methoxy-2-methyl-2-propoxy)-Hafnium and Remote-Plasma Oxygen
- Effect of Nitrogen on Electrical and Physical Properties of Polyatomic Layer Chemical Vapor Deposition HfSi_xO_y Gate Dielectrics