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Semiconductor Device Engineering Laboratory Toshiba Corp. | 論文
- Formation of InAs Wires and Dots on Vicinal GaAs (110) Surfaces with Giant Steps by Molecular Beam Epitaxy
- Low-Energy Electron Diffraction Analysis on Initial Stages of Ge Growth on Si(111)(1×1) -As and As-Desorbed Si(111)(1×1) Surfaces
- Relation between Stress-Induced Leakage Current and Dielectric Breakdown in SiN-Based Antifuses
- ESR Study of MOSFET Characteristics Degradation Mechanism by Water in Intermetal Oxide (Special Issue on LSI Failure Analysis)
- Present and Future Directions for Multichip Module Technologies(Special Issue on the 1994 VLSI Circuits Symposium)