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Room 1102 School Of Electrical Engineering Seoul National University | 論文
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
- A Characteristics of Buried Channel Poly-Si TFTs
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation