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Research Institute for Electronic Science, Hokkaido University | 論文
- Processing Structures on Human Fingernail Surfaces Using a Focused Near-Infrared Femtosecond Laser Pulse
- Comparison of Electrical and Optical Properties of n-i-i and p-i-n ZnSSe Heterostructure Diodes
- A Two-Dimensional Photonic Crystal Laser
- Superconductor-based Light Emitting Diode: Demonstration of Role of Cooper Pairs in Radiative Recombination Processes
- Bandgap Energy of GaNAs Alloys Grown on (001) GaAs by Metalorganic Molecular Beam Epitaxy
- Role of Nitrogen Precursor Supplies on InAs Quantum Dot Surfaces in Their Emission Wavelengths
- Langmuir Layers and Langmuir-Blodgett Films of Bis-tetrathiafulvalene Annelated Macrocycle
- Superconductivity and Metal-Insulator Transition in Twin-Columnar Organic Superconductor, (BETS)_2(X_2TCNQ)[X=C1, Br]
- Tuning of Intramolecular π-π Overlap Mode of Tetrathiafulvalene Bisannulated Macrocycles in the Open-Shell Electronic State
- Donor - Acceptor Type Superconductor, (BETS)_2 (Cl_2 TCNQ)
- Neutron scattering study of the normal-incommensurate phase transition in Rb_2ZnBr_4
- Structural and Luminescence Properties of InAs Quantum Dots : Effect of Nitrogen Exposure on Dot Surfaces
- GaNAs as Strain Compensating Layer for 1.55 μm Light Emission from InAs Quantum Dots
- Metalorganic Molecular-Beam Epitaxial Growth and Optical Properties of Er-Doped GaNP
- Selective Growth of Highly Packed Array of ZnCdS Quantum Dots with a Mask Prepared by Atomic Force Microscope Nanolithography
- Intrinsic and Extrinsic Excitonic Features in MgS/ZnSe Superlattices Revealed by Microspectroscopy
- Nucleation in the Nanometer Scale Selective Area Growth of II-VI Semiconductors
- Low-Temperature Selective Growth of ZnSe and ZnS on (001) GaAs Patterned with Carbonaceous Mask by Metalorganic Molecular-Beam Epitaxy
- ZnSe/ZnS Distributed Bragg Reflectors in the Blue Region Grown on (311)B GaAs Substrates
- Selective Growth Conditions of ZnSe/ZnS Heterostructures on (001) GaAs with Metalorganic Molecular Beam Epitaxy