スポンサーリンク
Research Institute Of Electronics Shizuoka University・graduate School Of Electronic Science And Tech | 論文
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (シリコン材料・デバイス)
- Growth of homogeneous InGaSb ternary bulk crystal and the observation of composition profile in the solution by X-ray penetration method (電子部品・材料)
- Doping and characterization for ZnO:N films grown by radical induced remote plasma metaloganic chemical vapor deposition
- Zn_Cd_xO/ZnO Heterostructures for Visible Light Emitting Devices
- Hydroxyl-Radical-Assisted Growth of ZnO Films by Remote Plasma Metal-Organic Chemical Vapor Deposition
- Characterization of Wurtzite Zn_Cd_xO Films Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- Zn_Cd_xO Film Growth Using Remote Plasma-Enhanced Metalorganic Chemical Vapor Deposition
- OH Radical Activation of AnO Growth in Remote Plasma Metalorganic Chemical Vapor Deposition