スポンサーリンク
Research Institute Of Electrical Communication Tohoku University:(present Address) Research Institut | 論文
- Spreading Resistance of InSb Crystals Pulled under Ultrasonic Vibrations
- Epitaxial Growth with Light Irradiation
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers
- Micron-Sized Facets in Pulled GaSb Crystals
- Wavy Impurity Patterns beside the Twin Boundary in Pulled GaSb Crystals
- Hydrogen Etching of Silicon Carbide
- Twin Pits in the Facet Region of GaSb Pulled Crystals
- On the Boundary between Facet and Off-Facet in Pulled GaSb Single Crystals
- Growth Rate of SiC Crystals from Cr Solution in the Traveling Solvent Method
- An Improved Czochralski Technique for Growing Single Crystals with High Homogeneity
- Two-Dimensional Growth and Decomposition of Initial Thermal SiO_2 Layer on Si(100)
- Composition Conversion Mechanism of InSb into InGaSb
- Melt Mixing of the 0.3In/0.7GaSb/0.3Sb Solid Combination by Diffusion under Microgravity