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Research Department, Electronics and Telecommunications Research Institute | 論文
- Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy
- Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy
- Low-Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine, Triethylgallium and Trimethylindium
- Surface Morphology of (NH_4)_2S_x-Treated GaAs (100) Investigated by Scanrning Tunneling Microscopy
- Photoinduced Hole Tunneling in Resonant Tunneling Diodes
- Dynamic Optical Interconnection in Free-Space Switching System
- Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy