スポンサーリンク
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo 158-0082, Japan | 論文
- Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates