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Quantum-functional Semiconductor Research Center and Department of Physics | 論文
- Formation of p-Type Hg_Cd_Te Epilayers Grown on CdTe Buffer Layers on GaAs (211) B due to In Situ Thermal Annealing
- Hydrogenation and Annealing Effects on Deep Levels in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates : Semiconductors
- A Study of Photoelectrochemical Oxidation of GaN Epilayers by Extrinsic Photoconductivity : Semiconductors
- Activation Energy, Capture Cross Section, and Emission Frequency of the Trap Level in Unintentionally Doped n-Type GaN Epilayers Grown on Sapphire Substrates in a Nitrogen-Rich Atmosphere
- Annealing Effect on Passivated Deep Levels in GaN Epilayers
- Enhancement of the Ferromagnetic Transition Temperature in Self-Assembled (Ga_Mn_x)As Quantum Wires
- Dependence of the Surface, the Structural, and the Optical Properties on the Thickness of the AIN Buffer Layer for GaN Epilayers Grown on Sapphire Substrates : Semiconductors
- Rapid Thermal Annealing Effects in CdTe (111) Thin Films Grown on GaAs (100) Substrates