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Quality Evaluation and Chemical Analysis Department, Fukuryou Semicon Engineering Corporation | 論文
- Phase-Shifting X-Ray Shearing Interferometer
- Void free at Interface of the SiC Film and Si Substrate
- Conversion of Si(100) to Si_Ge_xC_y Alloy by Hydrogen Plasma Containing Ge and C Species
- Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors