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Quality Evaluation and Chemical Analysis Department, Fukuryo Semicon Engineering Corporation | 論文
- Optical Second-Harmonic Generation of Tetrazole Derivatives
- Void free at Interface of the SiC Film and Si Substrate
- Conversion of Si(100) to Si_Ge_xC_y Alloy by Hydrogen Plasma Containing Ge and C Species
- Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors
- Compositional Changes of SiC/Si Structure during Vacuum Annealing
- Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
- Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
- Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique