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Production Engineering Research Laboratory, Canon Inc. | 論文
- Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate
- Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
- Influence of Secondary Factors on Characteristics of Externally Pressurized Porous Annular Thrust Gas Bearings
- Low Temperature Deposition of Gate Silicon Dioxide Film for Thin Film Transistors by Photoassisted Remote Plasma Chemical Vapor Deposition Method