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Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company | 論文
- Low Leakage TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low-Temperature Oxidation
- Reliable High-k TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation
- Very High Selective N^+ poly-Si RIE with Carbon Elimination : Etching and Deposition Technology