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Process Engineering Lab Samsung Advanced Institute Of Technology | 論文
- High Density FRAM for Next Generation Mobile Electronics(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- High Density FRAM for Next Generation Mobile Electronics(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Novel Ir-Ti Alloy Electrodes for High-Density Ferroelectric Memory Applications
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti)O_3 Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor
- Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor
- Liquid Delivery Metal-Organic Chemical Vapor Deposition of Pb(Zr_xTi_)O_3 Thin Films for High-Density Ferroelectric Random Access Memory Application