High Density FRAM for Next Generation Mobile Electronics(Session B5 Si-Devices I)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))

概要

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The growth characteristics of Pb(Zr_xTi_<1-x>0_3 thin films on three-dimensional (3D) electrodes were investigated for the application to high-density ferroelectric random access memory (FRAM) devices. PZT films have been grown on Ir coated trench structures having aspect ratio of 1.2 by liquid delivery-metal organic chemical vapor deposition (LD-MOCVD). Atomic layer deposited (ALD) Ir electrode showed good step coverage and electrical properties. MOCVD PZT films showed step coverage of 90% at deposition temperature of 500℃, while it is decreased to 63% at 550℃. Step coverage was improved by decreasing deposition temperature, while the electrical properties was deteriorated due to the pyrochlore phase at low deposition temperature. Compositional non-uniformity of PZT along the sidewall of cylinder was greatly affected by the types of the metal organic precursors.
2004-06-24