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Process Development Center Canon Anelva Corporation | 論文
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Tunnel Magnetoresistance above 170% and Resistance--Area Product of 1 $\Omega$ (μm)2 Attained by In situ Annealing of Ultra-Thin MgO Tunnel Barrier
- Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes
- Crystallization of Amorphous CoFeB Ferromagnetic Layers in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- Characterization of Ultrathin Fe--Co Layer Grown on Amorphous Co--Fe--B by In situ Reflective High-Energy Electron Diffraction
- Large Emission Power over 2 μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Characterization of Ultrathin Fe-Co Layer Grown on Amorphous Co-Fe-B by In situ Reflective High-Energy Electron Diffraction
- Large Emission Power over 2μW with High Q Factor Obtained from Nanocontact Magnetic-Tunnel-Junction-Based Spin Torque Oscillator
- Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
- High Q factor over 3000 due to out-of-plane precession in nano-contact spin-torque oscillator based on magnetic tunnel junctions