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Optical Measurement Technology Development Co., Ltd. | 論文
- High-Speed GaInAs PIN Photodiodes with Low Series Resistance
- Evaluation of Surface Zn Concentration in Zn Diffusion into InP
- Effects of Phosphorus Pressure on Low-Energy Emission Bands in Zn-Diffused InP
- Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer
- Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE
- GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique
- Zn Diffusion into InP Using Dimethylzinc as a Zn Source
- A Broad-Band Traveling-Wave Ti:LiNbO_3 Optical Phase Modulator
- 1.5 μm Range Tunable Twin-Guide Laser Fabricated by All MOVPE
- Proposal of Source Supply Efficiency Analysis for InGaAsP Grown by MOVPE
- InGaAs/InP Gain-Coupled Distributed Feedback Laser with a Corrugated Active Layer
- Photonie Integrated Circuit Combining Two GaAs Distributed Bragg Reflector Laser Diodes for Generation of the Beat Signal
- Narrow Linewidth Characteristics in Tunable Twin-Guide Distributed Feedback Laser Diodes
- Theoretical Analysis of Wavelength Tuning and Power Variation for Complementary Twin-Active-Guide Lasers
- Tunable Laser Diode Having a Complementary Twin-Active-Guide (CTAG) Structure
- Investigation of Gas-Phase Reaction between Trimethylamine Alane and Triethylgallium in Chemical Beam Epitaxy
- Transverse Magnetic (TM) Guided -Transverse Electric (TE) Radiation Mode Conversion in Proton-Exchanged Z-Cut LiNbO_3 Waveguides
- GaAs Schottky Photodiode Fabricated on Glass Substrate Using Epitaxial Lift-Off Technique