GaAs Schottky Photodiode Fabricated on Glass Substrate Using Epitaxial Lift-Off Technique

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概要

• 論文の詳細を見る

• We report on a substrate-side-illuminated GaAs Schottky photodiode fabricated on a glass substrate using the epitaxial lift-off technique. An external quantum efficiency in excess of 70% was observed at a wavelength of 780 nm. This is approximately 1.6 times higher than that of a conventional photodiode which has an absorption layer of the same thickness and is illuminated through a semitransparent Schottky window.

• 社団法人応用物理学会の論文
• 1992-07-01

著者

• Kobayashi Fumihiko

  Optical Measurement Technology Development Co. Ltd.

• Sekiguchi Youichi

  Optical Measurement Technology Development Co. Ltd.

• KOBAYASHI Fumihiko

  Optical Measurement Technology Development Co., Ltd.

関連論文

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• GaAs Schottky Photodiode Fabricated on Glass Substrate Using Epitaxial Lift-Off Technique

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