34 GHz Bandwidth GaAs High-Speed Schottky Barrier Photodiode Fabricated by Chemical-Beam Epitaxy

概要

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A high-speed, high-sensitivity GaAs Schottky barrier photodiode grown by chemical-beam epitaxy (CBE) has been designed, fabricated, and characterized. Antireflection coatings utilizing Si and SiO_2 films were optimally used to minimize reflection loss, thereby significantly improving sensitivity of the Schottky barrier photodiode. This device has a -3 dB cutoff frequency of 34 GHz, determined by an optical heterodyne technique, an external quantum efficiency of 41% at 780 nm wavelength, and a dark current of 100 pA (V_R=-2 V).
社団法人応用物理学会の論文
1992-02-15