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Ntt Photonic Laboratories Ntt Corpration | 論文
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
- GaAs Photonic Crystals on SiO_2 Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding
- Over-10-dBm output uni-traveling-carrier photodiode module integrating a power amplifier for wireless transmissions in the 125-GHz band
- 60-GHz Monolithic Photonic Millimeter-Wave Emitter for Fiber-Radio Applications
- Ultrafast All-Optical Serial-to-Parallel Conversion and Its Application to Optical Label Processing
- Improved Response of Uni-Traveling-Carrier Photodiodes by Carrier Injection
- InP/InGaAs Uni-Traveling-Carrier Photodiodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
- Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance
- High-Speed Response of Uni-Traveling-Carrier Photodiodes
- Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors
- Generation and Propagation of Sub-Terahertz Pulse Signal Using Waveguide-Integrated InP/InGaAs Uni-Traveling-Carrier Photodiode
- A Stable 2-W Supply Optical Powering System
- Comparison of Power Dissipation Tolerance of InP/InGaAs UTC-PDs and Pin-PDs(Lasers,Quantum Electronics)
- High-Speed and High-Output Uni-Traveling-Carrier Photodiodes(Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- Effects of Preamplifier Nonlinearity on PMD Equalization with Electronic Dispersion Compensation for 43G DQPSK
- InP-Based Planar-Antenna-Integrated Schottky-Barrier Diode for Millimeter- and Sub-Millimeter-Wave Detection
- Optical Characterization of Impact Ionization in Flip-Chip-Bonded InP-Based High Electron Mobility Transistors