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Nitride Semiconductor Research Laboratory, Nichia Corporation | 論文
- Watt-Class High-Output-Power 365 nm Ultraviolet Light-Emitting Diodes
- Optical Gain Spectra of a (0001) InGaN Green Laser Diode
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
- Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure
- Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates (電子部品・材料)