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New Industry Creation Hatchery Center Tohoku University:wpi Research Center Tohoku University | 論文

• MOS Transistors fabricated on Si(551) surface based on radical reaction processes
• High Integrity Gate Insulator Films on Atomically Flat Silicon Surface(Session 7A : Gate Oxides)
• MOS Transistors fabricated on Si(551) surface based on radical reaction processes
• High performance accumulation mode FD-SOI MOSFETs on Si(110) and (110) surfaces (シリコン材料・デバイス)
• High Performance and Highly Reliable Novel CMOS Devices Using Accumulation Mode Fully Depleted SOI MOSFETs

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