スポンサーリンク
National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Thermoelectric Properties of Single-Crystalline SiC and Dense Sintered SiC for Self-Cooling Devices
- Numerical Investigation of the Growth Rate Enhancement of SiC Crystal Growth from Silicon Melts
- Effects of A-Site Ions on the Phase Transition Temperatures and Dielectric Properties of ($1-x$)(Na0.5K0.5)NbO3--$x$AZrO3 Solid Solutions
- 830-nm Polarization Controlled Lasing of InGaAs Quantum Wire Vertical-Cavity Surface-Emitting Lasers Grown on (775)B GaAs Substrates by Molecular Beam Epitaxy
- Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor
- Observation of Softened Fe Modes in K-Doped BaFe2As2 via 57Fe Nuclear Resonant Inelastic Scattering
- Enhancement of Hybridization between Two- and One-Dimensional Bands due to Coulomb and Spin–Orbit Interactions in Sr2RuO4
- Effect of K Doping on Phonons in Ba1-xKxFe2As2
- Fabrication and Characterization of Cu(In,Ga)(S,Se)-Based Solar Cells (Special Issue : Photovoltaic Science and Engineering)
- Growth of BaFe2(As1-xPx)2 Single Crystals (0\leq x\leq 1) by Ba2As3/Ba2P3-Flux Method
- Vacuum Annealing Formation of Graphene on Diamond C(111) Surfaces Studied by Real-Time Photoelectron Spectroscopy
- Transmission Characteristics of Hydrogenated Microcrystalline Silicon Wire Waveguide at a Wavelength of 1.55 μm
- Study of Neutron Diffraction on 154SmRu4P12 Single Crystal
- Observation of Helical Structure by Imaging Diagnostics in a Low-Aspect-Ratio Reversed Field Pinch
- Multi Junction Solar Cells Stacked with Transparent and Conductive Adhesive
- Transmission Characteristics of Hydrogenated Microcrystalline Silicon Wire Waveguide at a Wavelength of 1.55μm
- Chemical Doping into Nanocrystals of Poly(diacetylene)
- Formation of Low-Defect-Concentration Polycrystalline Silicon Films by Thermal Plasma Jet Crystallization Technique
- Long-Axis Fabry–Pérot Cavity for Intense Laser-Compton Photon Beam
- X-ray Absorption and Emission Spectroscopy Study of the Effect of Doping on the Low Energy Electronic Structure of PrFeAsO1-δ