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National Institute of Advanced Industrial Science and Technology, Spintronics Research Center | 論文
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers
- Enhanced Tunnel Magnetoresistance Effect in an Epitaxial Magnetic Tunnel Junction with a Hybrid γ-Fe_2O_3/MgO Barrier
- Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance
- Voltage-Induced Magnetic Anisotropy Changes in an Ultrathin FeB Layer Sandwiched between Two MgO Layers