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National Institute of Advanced Industrial Science and Technology, Power Electronics Research Center | 論文
- Effects of Pyrogenic Reoxidation Annealing on Inversion Channel Mobility of 4H-SiC Metal-Oxide-Semiconductor Field-Effect Transistor Fabricated on (1120) Face
- Study on Intrinsic Loss of Unipola Power Device due to Main Junction Capacitance
- Marginal Power Loss Extraction Method for Future High Output Power Density Converter
- Positron Trapping Sites Originating from Oxide Interfaces on 4H-SiC C($000\bar{1}$)- and Si(0001)-Faces
- Activation of p-Type Dopants in 4H–SiC Using Hybrid Super-Rapid Thermal Annealing Equipment