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National Defense Univ. Taoyuan Twn | 論文
- An Analytical Symmetric Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model
- An Analytical Fully-Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering the Effects of Self-Heating, Source/Drain Resistance, Impact-Ionization, and Parasitic Bipolar Junction Transistor
- A Simple, Analytical and Complete Deep-Submicrometer Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect-Transistor Model Considering Velocity Overshoot
- Superior SONOS Flash Memory with Tapered-Bandgap Nitride Layer
- MC-CDMA Blind Frequency-Offset Estimation: Projection Approaches(Terrestrial Radio Communication)
- A Linearly Constrained Minor Component Analysis Approach to Blind Adaptive Multiuser Interference Suppression(Wireless Communication Technology)
- A New Post-stress Drain Current Model for Surface-channel p-Type Metal-Oxide-Semiconductor-Field-Effect-Transistors
- A Compact Buried-Channel Lightly-Doped-Drain Metal-Oxide-Semiconductor-Field-Effect-Transistor Model
- Blind Adaptive H^∞ Multiuser Detection for CDMA Systems with Impulsive Noise
- Enhancement of SSB Capability for Multiuser Detection in the Mismatch Environment of Receiver Spreading Code
- New Submicron and Deep-Submicron Metal-Oxide-Semiconductor Field-Effect-Transistor I-V and C-V Model