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Nanodevice Innovation Research Center, National Institute of Advanced Industrial Science and Technology | 論文
- Selective Growth of Monoatomic Cu Rows at Step Edges on Si(111) Substrates in Ultralow-Dissolved-Oxygen Water
- Dopant-atom distribution measurement at p-n junctions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
- Two Dimensional Dopant Profiling by Scanning Tunneling Microscopy