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NTT Photonics laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan | 論文
- Improved Sensitivity of Optical Frequency Domain Reflectometry-Optical Coherence Tomography Using a Semiconductor Optical Amplifier
- Numerical Compensation of Dispersion Mismatch in Discretely Swept Optical-Frequency-Domain-Reflectometry Optical Coherence Tomography
- In0.75Ga0.25As Quantum Point Contacts Utilizing Wrap-Gate Geometry
- Inverted InAlAs/InGaAs Avalanche Photodiode with Low--High--Low Electric Field Profile
- Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector
- Planar Circulator for Sub-Terahertz-Wave Reflection-Geometry Imaging
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors
- Widely Frequency Tunable Terahertz-Wave Emitter Integrating Uni-Traveling-Carrier Photodiode and Extended Bowtie Antenna
- Low Loss Polymer Optical Waveguide Replicated from Flexible Film Stamp Made of Polymeric Material
- First Estimation of Power Consumption of KTa
- Improvement of Coherence Length in a 200 kHz Swept Light Source with a KTa
- Influence of Metalorganic Vapor Phase Epitaxy Regrowth on Characteristics of InAlN/AlGaN/GaN High Electron Mobility Transistors (Special Issue : Solid State Devices and Materials)
- Low Loss Polymer Optical Waveguide Replicated from Flexible Film Stamp Made of Polymeric Material (Photonics, quantum electronics, optics, and spectroscopy)