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Mos Development Center Sony Nagasaki Corporation | 論文
- Morphology Control of Films Formed by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate/Ozone System
- Precursors in Atmospheric-Pressure Chemical Vapor Deposition of Silica Films from Tetraethylorthosilicate/Ozone System
- Particle Generation and Film Formation in an Atmospheric-Pressure Chemical Vapor Deposition Reactor Using the Tetraethylorthosilicate (TEOS)/He, TEOS/O_2/He, and TEOS/O_3/He Systems
- Gas-Phase Nucleation in an Atmospheric Pressure Chemical Vapor Deposition Process for SiO_2 Films Using Tetraethylorthosilicate (TEOS)
- Formation of Dielectric Films for Gap-Filling by NH_3-Added H_2O-Tetraethoxysilane Plasma Chemical Vapor Deposition