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Microelectronics Research Center Sanyo Electric Co. Lid.:(present Address) Microelectronics Research | 論文
- Crystal Growth of Low-Temperature Processed Poly-Si by Excimer Laser Annealing - Dependences of Poly-Si Grain on Energy Density and Shot Number -
- Influence of Hydrogen in a-Si on Recrystallization of Low-Temperature Processed Poly-Si Film by Excimer Laser Annealing
- Extension of Physical Limit of Conventional Metal-Oxide-Semiconductor Transistor by Double Barriers Formed at the Channel Edges
- Study of Crystal Growth Mechanism for Poly-Si Film Prepared by Excimer Laser Annealing
- Grain Morphology of Recrystallized Polycrystalline-Si Film by Excimer Laser Annealing
- Characterization of Poly-Silicon Film Prepared by Excimer Laser Annealing
- Silicon Resonant Tunneling Metal-Oxide-Semiconductor Transistor for Sub-0.1μm Era(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Polysilicon Thin-Film Transistors Processed at Low Temperature (≦ 600℃) Using Solid-Phase Crystallization in Wet Oxygen Atmosphere