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Microelectronics Laboratory Santa Clara University | 論文
- Degradation and Recovery of Metal-Oxide-Semiconductor (MOS) Devices Stressed with Fowler-Nordheim (FN) Gate Current
- Direct Determination of Interface Trapped Charges
- Effects of Thermal Stability of Si_Ge_xC_y Layers on Properties of Their Contacts with Aluminum
- Enhanced Degradation During Static Stressing of a Metal Oxide Semiconductor Field Effect Transistor Embedded in a Circuit