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Microelectronics Engineering Lab., Toshiba Corporation | 論文

• Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion
• Correlation of W-Si-N Film Microstructure with Barrier Performance against Cu Diffusion
• Inlaid Cu Interconnects Employing Ti-Si-N Barrier Metal for ULSI Applications
• Study of LOCOS-Induced Anomalous Leakage Current in Thin Film SOI MOSFET's

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